KINGSTON SO-DDR3L 4GB PC3L-12800 1600MHZ 1,35V KVR16LS11/4 .

Descrizione

KVR16LS11/4

4GB 1Rx8 512M x 64-Bit PC3L-12800

CL11 204-Pin SODIMM

DESCRIPTION

This document describes ValueRAM’s 512M x 64-bit (4GB)

DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low

voltage, memory module, based on eight 512M x 8-bit FBGA

components. The SPD is programmed to JEDEC standard

latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This

204-pin SODIMM uses gold contact fingers. The electrical and

mechanical specifications are as follows:

FEATURES

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~

1.575V) Power Supply

• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

• 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 11, 10, 9, 8, 7, 6

• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB: Height 1.18” (30mm), double sided component

Document No. VALUERAM1347-001.B00 11/25/13 Page 1

Memory Module Specifi cations

Continued >>

SPECIFICATIONS

CL(IDD) 11 cycles

Row Cycle Time (tRCmin) 48.125ns (min.)

Refresh to Active/Refresh 260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin) 35ns (min.)

Maximum Operating Power (1.35V) = 2.376 W*

UL Rating 94 V – 0

Operating Temperature 0o

C to 85o

C

Storage Temperature -55o C to +100o

C

*Power will vary depending on the SDRAM.